酸化ガリウム反転型DI-MOSFETの基本動作を確認：ノベルクリスタルテクノロジー - EE Times Japan
Researching | Source-field-plated Ga2O3 MOSFET with a breakdown voltage of 550 V
Review—Recent Advances in Designing Gallium Oxide MOSFET for RF Application
Challenges to overcome breakdown limitations in lateral β-Ga2O3 MOSFET devices - ScienceDirect
Analytical Model for the Channel Maximum Temperature in Ga2O3 MOSFETs | Nanoscale Research Letters | Full Text
Design and fabrication of field-plated normally off β-Ga2O3 MOSFET with laminated-ferroelectric charge storage gate for high power application: Applied Physics Letters: Vol 116, No 24
Vertical Ga2O3 Power FET Produced with Low-Cost, Highly-Manufacturable Ion Implantation Doping Process - News
Ke Zeng at Stanford
Applied Sciences | Free Full-Text | Enhancement-Mode Heterojunction Vertical β-Ga2O3 MOSFET with a P-Type Oxide Current-Blocking Layer
Lateral β-Ga<sub>2</sub>O<sub>3</sub> MOSFET for power switching applications with a breakdown voltage of 1.8 kV | Ferdinand-Braun-Institut
Gallium Oxide Epiwafers
Press Release | First Demonstration of Gallium Oxide (Ga2O3) Metal-Oxide-Semiconductor Field-Effect Transistors (MOSFETs) | NICT-National Institute of Information and Communications Technology
Powering up gallium oxide metal-oxide-semiconductor field-effect transistors
First demonstration of vertical Ga2O3 MOSFET: Planar structure with a current aperture | Semantic Scholar
Ge-doped β-Ga2O3 MOSFETs
Current Aperture Vertical $\beta$ -Ga2O3 MOSFETs Fabricated by N- and Si-Ion Implantation Doping | Semantic Scholar
A review of the most recent progresses of state-of-art gallium oxide power devices
Development of world's first vertical gallium oxide transistor through ion implantation doping
Passivation pushes gallium oxide transistor to over 8kV
First vertical gallium oxide power MOSFET developed ...
High pulsed current density β-Ga2O3 MOSFETs verified by an analytical model corrected for interface charge: Applied Physics Letters: Vol 110, No 14
New contacts enhance heteroepitaxial Ga2O3 MOSFETs - News
Passivation coating increases power capabilities of Ga2O3 semiconductor
World's First Normally-Off Gallium-Oxide MOSFET Fabricated - News
The structure of the β-Ga2O3 MOSFET. | Download Scientific Diagram
